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AN8000/AN8000M Series 3-pin Positive Output Low Dropout Voltage Regulator (50mA Type) s Overview The AN8000 series is 3-pin low-dropout fixed positive output monolithic voltage regulators. Since thier power consumption can be minimized, they are suitable for battery stabilizing power supply and reference voltage. Thirteen types of output voltage are available ; 2V, 2.5V, 3V, 3.5V (TO-92 only) , 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V. 2.54 AN8000 Series 5.00.2 5.10.2 4.00.2 Unit:mm 0.45 - 0.1 + 0.2 13.50.5 2.30.2 1 : Input 2 : Output 3 : GND s Features 231 * Input/output voltage difference : 0.3V (max.) * Output current of up to 50mA * Low bias current ; 0.6mA (typ.) * Output voltage ; 2V, 2.5V, 3V, 3.5V (TO-92 only) , 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V. * Over-voltage protective circuit built-in. (Bottom View) TO-92 Plastic Package (SSIP003-P-0000) AN8000M Series 4.6max. 1.8max. Unit:mm 1.6max. 0.48max. 1.5 3.0 0.8min. 4.25max. 0.44max. 1 : Output 2 : GND 3 : Input 0.58max. 1 2 3 3-pin Mini Power type Plastic Package (TO-243) (HSIP003-P-0000B) s Block Diagram Starter Voltage Reference + Error Amp. - Current Limiter R2 R1 : TO-92 : TO-243 R1=5k CIN=0.33F COUT=10F 1 3 VI 2 3 - + 1 2 VO COUT 2.6max. 2.6 45 s Absolute Maximum Ratings (Ta=25C) Parameter Supply voltage Supply current Power dissipation Operating ambient temperature Storage temperature AN8000 Series AN8000M Series Symbol VI ICC PD Topr Tstg Rating 20 100 650 * -30 to+80 -55 to+150 -55 to+125 Unit V mA mW C C * Mounting onto the PCB (20 x 20 x 1.7mm glass epoxy copper foil 1 cm2 or more), for AN8000M Series. s Electrical Characteristics (Ta=25C) * AN8002/AN8002M (2V Type) Parameter Output voltage Line regulation Load regulation Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C Condition VI=2.5 to 8V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=1.9V, IO=20mA, Tj=25C VI=1.9V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=3 to 5V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C min 1.92 typ 2 2 7 10 0.06 0.12 0.6 max 2.08 40 20 25 0.2 0.3 1 Unit V mV mV mV V V mA dB V mV/C Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient 62 74 60 0.1 Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=3V, IO=20mA, CO=10F * AN8025/AN8025M (2.5V Type) Parameter Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C VI=3 to 8.5V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=2.4V, IO=20mA, Tj=25C VI=2.4V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=3.5 to 5.5V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C 60 Condition min 2.4 typ 2.5 2.5 8 12.5 0.07 0.12 0.6 72 65 0.13 max 2.6 50 20 25 0.2 0.3 1 Unit V mV mV mV V V mA dB V mV/C Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=3.5V, IO=20mA, CO=10F s Electrical Characteristics (Ta=25C) * AN8003/AN8003M (3V Type) Parameter Output voltage Line regulation Load regulation Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C Condition VI=3.5 to 9V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=2.9V, IO=20mA, Tj=25C VI=2.9V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=4 to 6V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C min 2.88 typ 3 3 9 15 0.07 0.12 0.6 max 3.12 50 25 30 0.2 0.3 1 Unit V mV mV mV V V mA dB V mV/C Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient 58 70 70 0.15 Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=4V, IO=20mA, CO=10F * AN8035/AN8035M (3.5V Type) Parameter Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C VI=4 to 9.5V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=3.4V, IO=20mA, Tj=25C VI=3.4V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=4.5 to 6.5V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C 57 Condition min 3.36 typ 3.5 3.5 10 20 0.07 0.12 0.6 69 75 0.2 max 3.64 50 30 40 0.2 0.3 1 Unit V mV mV mV V V mA dB V mV/C Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=4.5V, IO=20mA, CO=10F * AN8004/AN8004M (4V Type) Parameter Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C VI=4.5 to 10V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=3.8V, IO=20mA, Tj=25C VI=3.8V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=5 to 7V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C 56 Condition min 3.84 typ 4 3.5 10 20 0.07 0.12 0.6 67 80 0.2 max 4.16 50 30 40 0.2 0.3 1 Unit V mV mV mV V V mA dB V mV/C Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=5V, IO=20mA, CO=10F s Electrical Characteristics (Ta=25C) * AN8045/AN8045M (4.5V Type) Parameter Output voltage Line regulation Load regulation Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C Condition VI=5 to 10.5V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=4.3V, IO=20mA, Tj=25C VI=4.3V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=5.5 to 7.5V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C min 4.32 typ 4.5 4 11 23 0.07 0.12 0.7 max 4.68 50 35 45 0.2 0.3 1 Unit V mV mV mV V V mA dB V mV/C Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient 54 66 85 0.23 Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=5.5V, IO=20mA, CO=10F * AN8005/AN8005M (5V Type) Parameter Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C VI=5.5 to 11V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=4.8V, IO=20mA, Tj=25C VI=4.8V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=6 to 8V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C 52 Condition min 4.8 typ 5 4.5 12 25 0.07 0.12 0.7 64 95 0.25 max 5.2 50 40 50 0.2 0.3 1 Unit V mV mV mV V V mA dB V mV/C Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=6V, IO=20mA, CO=10F * AN8006/AN8006M (6V Type) Parameter Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C VI=6.5 to 12V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=5.8V, IO=20mA, Tj=25C VI=5.8V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=7 to 9V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C 51 Condition min 5.76 typ 6 5.5 13 28 0.07 0.13 0.7 63 105 0.3 max 6.24 60 45 55 0.2 0.3 1.2 Unit V mV mV mV V V mA dB V mV/C Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=7V, IO=20mA, CO=10F s Electrical Characteristics (Ta=25C) * AN8007/AN8007M (7V Type) Parameter Output voltage Line regulation Load regulation Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C Condition VI=7.5 to 13V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=6.8V, IO=20mA, Tj=25C VI=6.8V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=8 to 10V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C min 6.72 typ 7 6.5 14 31 0.07 0.13 0.7 max 7.28 70 50 60 0.2 0.3 1.3 Unit V mV mV mV V V mA dB V mV/C Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient 50 62 120 0.35 Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=8V, IO=20mA, CO=10F * AN8008/AN8008M (8V Type) Parameter Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C VI=8.5 to 14V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=7.8V, IO=20mA, Tj=25C VI=7.8V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=9 to 11V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C 49 Condition min 7.68 typ 8 7.5 15 34 0.07 0.14 0.7 61 135 0.4 max 8.32 80 55 65 0.2 0.3 1.3 Unit V mV mV mV V V mA dB V mV/C Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=9V, IO=20mA, CO=10F * AN8085/AN8085M (8.5V Type) Parameter Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C VI=9 to 14.5V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=8.3V, IO=20mA, Tj=25C VI=8.3V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=9.5 to 11.5V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C 48 Condition min 8.16 typ 8.50 8.3 16 36 0.07 0.14 0.8 60 140 0.43 max 8.84 90 60 70 0.2 0.3 1.4 Unit V mV mV mV V V mA dB V mV/C Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=9.5V, IO=20mA, CO=10F s Electrical Characteristics (Ta=25C) * AN8009/AN8009M (9V Type) Parameter Output voltage Line regulation Load regulation Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C Condition VI=9.5 to 15V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=8.8V, IO=20mA, Tj=25C VI=8.8V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=10 to 12V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C min 8.64 typ 9 9 17 37 0.07 0.14 0.8 max 9.36 100 70 75 0.2 0.3 1.4 Unit V mV mV mV V V mA dB V mV/C Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient 47 59 150 0.45 Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=10V, IO=20mA, CO=10F * AN8010/AN8010M (10V Type) Parameter Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Symbol VO REGIN REGL VDIF (min.) Ibias RR Vno VO/Ta Tj=25C VI=10.5 to 16V, Tj=25C IO=1 to 40mA, Tj=25C IO=1 to 50mA, Tj=25C VI=9.8V, IO=20mA, Tj=25C VI=9.8V, IO=50mA, Tj=25C IO=0mA, Tj=25C VI=11 to 13V, f=120Hz f=10Hz to 100kHz Tj=-30 to+125C 46 Condition min 9.6 typ 10 10 18 40 0.07 0.14 0.8 58 165 0.5 max 10.4 100 75 85 0.2 0.3 1.4 Unit V mV mV mV V V mA dB V mV/C Note1) The specified condition Tj=25C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=11V, IO=20mA, CO=10F s Application Circuit Vin Vout AN8000 AN8000M 0.33F + 10F - The AN8000/AN8000M series has IC internal gain increased in order to improve performance. When the power line on the output side is long, use a capacitor of 10F. For the capacitor on the output side, attach it as close to the IC as possible. When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example, tantalum capacitor) for output capacitors. s Characteristic Curve PD -Ta (AN8000 Series) 800 800 PD -Ta (AN8000M Series) Power Dissipation PD (mW) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Power Dissipation PD (mW) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 ( Mounting onto PCB 20 x 20 x 7mm Glass Epoxy PCB, Copper foil 1cm2 or more ) Ambient Temperature Ta (C) Ambient Temperature Ta (C) RR- f Ripple Rejection Ratio RR (dB) 80 70 60 50 40 30 0 50 100 300 500 1k 3k 5k 10k 30k 50k 100k 0 5 AN8005 12 VO -VI Output Voltage VO (V) 10 8 6 4 2 AN8002/M CO=10F IO=0mA AN8010/M AN8005/M 10 15 20 Frequency f (Hz) Input Voltage VI (V) VO - IO 5.3 5.3 VO -Ta Output Voltage VO (V) AN8005 VI=6V CO=10F 5.2 5.1 5.0 4.9 4.8 4.7 -40 AN8005 VI=6V CO=10F IO=0mA Output Voltage VO (V) 5.2 5.1 5.0 4.9 4.8 4.7 0 10 20 30 40 50 60 70 80 90 100 -20 0 20 40 60 80 100 120 140 160 Output Current VO (mA) Ambient Temperature Ta (C) |
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